Abstract
The influence of simulating factors of a nuclear explosion and proton irradiation on the photoelectric properties of photodiodes based on indium selenide was studied. It was established that neutron pulses lead to an improvement in the photoelectric properties of the photodiodes under study. It has been shown that high fluences of neutron irradiation facilitate the process of breaking off complexes in the interlayer space of layered indium selenide, as a result of which the photoelectric parameters of photodiodes somewhat deteriorate.