INFLUENCE OF GAMMA, ELECTRON, PROTON AND GAMMA NEUTRON IRRADIATION ON PHOTODIODES BASED ON InSe WITH IMPROVED PARAMETERS
Valida Ibrahim Haciyeva, Shirzad Zulfugar Babayev
Abstract
The influence of simulating factors of a nuclear explosion and proton irradiation on the photoelectric properties of photodiodes based on indium selenide was studied. It was established that neutron pulses lead to an improvement in the photoelectric properties of the photodiodes under study. It has been shown that high fluences of neutron irradiation facilitate the process of breaking off complexes in the interlayer space of layered indium selenide, as a result of which the photoelectric parameters of photodiodes somewhat deteriorate.
Measured on this website since 2026-10-08. Repeat events in the same browser within one hour are counted once. PDF counts record clicks from this article page, not confirmed completed downloads.