The kinetics of accumulation process of non-equilibrium charge carriers (free electrons of n and p holes) in silicate systems under the effect of γ-radiation has been studied by the acceptor method. The laws of beryllium content effects in the silicate composition on the yield of localized states of non-equilibrium charge carriers established. It revealed that electron-hole pairs with the yield G0(n.c.)=4.0±0.43 pair/100eV are generated under the effect of γ-radiation in silicate systems and the generation processes of non-equilibrium charge carriers with the value of threshold energy Еn=22-25эВ correspond to the correlation Еn=2.0 Еg